دانشگاه آزاد اسلامی واحد علوم و تحقیقات

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Hojabri, Alireza. (1395). Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates. , 10(3), 219-224. doi: 10.1007/s40094-016-0218-8
Alireza Hojabri. "Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates". , 10, 3, 1395, 219-224. doi: 10.1007/s40094-016-0218-8
Hojabri, Alireza. (1395). 'Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates', , 10(3), pp. 219-224. doi: 10.1007/s40094-016-0218-8
Hojabri, Alireza. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates. , 1395; 10(3): 219-224. doi: 10.1007/s40094-016-0218-8

Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Journal of Theoretical and Applied Physics
مقاله 6، دوره 10، شماره 3، آذر 2016، صفحه 219-224  XML اصل مقاله (1.61 M)
شناسه دیجیتال (DOI): 10.1007/s40094-016-0218-8
نویسنده
Alireza Hojabri email
Department of Physics, Karaj Branch, Islamic Azad University
چکیده
AbstractZirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60–240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel’s method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.
کلیدواژه‌ها
ZrO؛ Morphology؛ Optical band gap؛ Annealing؛ Sputtering
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