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First principle study of the effect of defects on performance of single-molecule pentacene field effect transistors | ||
Journal of Theoretical and Applied Physics | ||
مقاله 9، دوره 9، شماره 3، آذر 2015، صفحه 213-219 اصل مقاله (2.94 M) | ||
شناسه دیجیتال (DOI): 10.1007/s40094-015-0182-8 | ||
نویسندگان | ||
Bahniman Ghosh 1؛ Akash Gramin2 | ||
1Microelectronics Research Center, University of Texas at Austin;Department of Electrical Engineering, Indian Institute of Technology Kanpur | ||
2Department of Electrical Engineering, Indian Institute of Technology Kanpur | ||
چکیده | ||
AbstractIn this work, we have performed first principle study on a single-molecule pentacene field effect transistor and studied various oxygen- and hydrogen-induced defects in the same device configuration. Further, we have investigated the effect of these defects on the various electronic transport properties of the device and compared them with those of the original device along with reporting the negative differential region window and the peak-to-valley ratio in different cases. For this purpose, we have applied the density functional theory in conjugation with non-equilibrium green’s function (NEGF) formalism on a 14.11 Å pentacene device to obtain the I–V characteristics, conductance curves and transmission spectra in various device scenarios. | ||
کلیدواژهها | ||
Pentacene؛ Field effect transistors؛ Non؛ equilibrium Green’s function؛ Density functional theory | ||
آمار تعداد مشاهده مقاله: 58 تعداد دریافت فایل اصل مقاله: 30 |