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Barkhordari, Ali, Mashayekhi, Hamid, Altındal, Şemsettin, Özçelik, Süleyman, Azizian-Kalandaragh, Yashar. (1401). Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector. , 17(1), -. doi: 10.30495/jtap.172308
Ali Barkhordari; Hamid Reza Mashayekhi; Şemsettin Altındal; Süleyman Özçelik; Yashar Azizian-Kalandaragh. "Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector". , 17, 1, 1401, -. doi: 10.30495/jtap.172308
Barkhordari, Ali, Mashayekhi, Hamid, Altındal, Şemsettin, Özçelik, Süleyman, Azizian-Kalandaragh, Yashar. (1401). 'Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector', , 17(1), pp. -. doi: 10.30495/jtap.172308
Barkhordari, Ali, Mashayekhi, Hamid, Altındal, Şemsettin, Özçelik, Süleyman, Azizian-Kalandaragh, Yashar. Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector. , 1401; 17(1): -. doi: 10.30495/jtap.172308

Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector

Journal of Theoretical and Applied Physics
مقاله 8، دوره 17، شماره 1، خرداد 2023  XML
نوع مقاله: Scientific Research Manuscript
شناسه دیجیتال (DOI): 10.30495/jtap.172308
نویسندگان
Ali Barkhordari email 1؛ Hamid Reza Mashayekhi1؛ Şemsettin Altındal2؛ Süleyman Özçelik3؛ Yashar Azizian-Kalandaragh4
1Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran
2Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey
3Department of Photonics, Faculty of Applied Sciences, Gazi University, Ankara, Turkey
4Photonics Application and Research Center, Gazi University, Ankara, Turkey
چکیده
In this paper, using finite difference method, the effect of adding a p-layer at the back of a metal-semiconductor-metal (MSM) photodetector (PD) on the spatial electric charge distribution and the transient response of the device is numerically studied. To this aim, the fundamental equations of the semiconductor device, i.e., two current continuity time-dependent equations have been considered coupled with Poisson's equation. The I-V curve of the MSM photodetector is obtained as the main characteristics of each semiconductor device. Moreover, the variations of electrostatic potential, electron and hole concentrations are determined in the MSM photodetector with a p-layer at the back of the active layer. It is observed that the peak transient response of an MSM device is improved by back-gating the device as more electrons are injected to the semiconductor layer and the slower charge carriers (the holes) to be removed from the top circuit.
کلیدواژه‌ها
MSM Photodetector؛ p-type layer؛ Continuity and Poisson’ s Equations؛ Numerical Solution؛ Finite Difference Method
آمار
تعداد مشاهده مقاله: 106


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