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Dehghan, Neda, Niazian, Mohammad Reza, Yaghobi, Mojtaba, Khodadadi, Abolfazl, Ramzanpour, Mohammad Ali. (1401). Effect of the vacancy on the electrical transport properties of boron nitride nanosheets. , 17(1), -. doi: 10.30495/jtap.172311
Neda Dehghan; Mohammad Reza Niazian; Mojtaba Yaghobi; Abolfazl Khodadadi; Mohammad Ali Ramzanpour. "Effect of the vacancy on the electrical transport properties of boron nitride nanosheets". , 17, 1, 1401, -. doi: 10.30495/jtap.172311
Dehghan, Neda, Niazian, Mohammad Reza, Yaghobi, Mojtaba, Khodadadi, Abolfazl, Ramzanpour, Mohammad Ali. (1401). 'Effect of the vacancy on the electrical transport properties of boron nitride nanosheets', , 17(1), pp. -. doi: 10.30495/jtap.172311
Dehghan, Neda, Niazian, Mohammad Reza, Yaghobi, Mojtaba, Khodadadi, Abolfazl, Ramzanpour, Mohammad Ali. Effect of the vacancy on the electrical transport properties of boron nitride nanosheets. , 1401; 17(1): -. doi: 10.30495/jtap.172311

Effect of the vacancy on the electrical transport properties of boron nitride nanosheets

Journal of Theoretical and Applied Physics
مقاله 11، دوره 17، شماره 1، خرداد 2023  XML
نوع مقاله: Scientific Research Manuscript
شناسه دیجیتال (DOI): 10.30495/jtap.172311
نویسندگان
Neda Dehghan1؛ Mohammad Reza Niazian email orcid 1؛ Mojtaba Yaghobi1؛ Abolfazl Khodadadi2؛ Mohammad Ali Ramzanpour1
1Department of Physics, Ayatollah Amoli Branch, Islamic Azad University, Amol, Iran
2Department of Physics, North Tehran Branch, Islamic Azad University, Tehran, Iran
چکیده
Vacancies occur naturally in all crystalline materials. A vacancy is a point defect in a crystal in which an atom is removed at one of the lattice sites. The defect could be imported during the synthesis of the material or be added by defect engineering. In this paper by employing the density functional theory as well as the non-equilibrium Green’s function approach, the structure and electronic properties of the perfect and defected BN nanosheet would be obtained and compared.

In addition to the influence of the vacancy defect position, the effect of removed atom type is also studied. For this purpose, the defect is considered at the centre, left, and right-hand sides of the nanosheet. It is seen that the electric current changes by changing the position of the vacancy defect and the type of removed atoms. This can be related to the electronic structures of BN nanosheets. In addition, the transmission and conductance of the defected BN nanosheets continuously change by changing the bias voltage.

The obtained results can benefit the design and implementation of BN nanosheets in nanoelectronic systems and devices.
کلیدواژه‌ها
Point defect؛ BN nanosheets device؛ Slater– Koster tight-binding model؛ DFTB؛ Atomistix toolKit
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تعداد مشاهده مقاله: 124


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